Descrizione
Scheda Tecnica
Article IRF820
Description N-Channel HEXFET POWER MOSFET integrated zener diode
Polarity N-CHANNEL (N-FET)
Drain Current 2,5A
Drain-Source Voltage 500V
Resistence Drain-Soucer RDS 3oHM - 3R
Power dissipation 50W
Time
Package-Case TO220 - TO-220
Pinning 1: Gate - 2: Drain - 3: Source
Marking
Article in substitution (advised) BUZ74 - MT3N50 - 2SK382 - 2SK892 - 2SK1244