IRF610 Mos-N FET

Marchio	Predefinito
Cod.	IRF610

Confezione

Disponibilità	Disponibile
Prezzo offerto	1,93 €

Prezzi IVA compresa

Quantità

IRF610 Mos-N FET

Scheda tecnica


Scheda Tecnica

Article IRF610

Description N-Channel HEXFET POWER MOSFET integrated zener diode

Polarity N-CHANNEL (N-FET)

Drain Current 3,3A

Drain-Source Voltage 200V

Resistence Drain-Soucer RDS 1,5oHM - 1,5R - 1R5

Power dissipation 36W

Time

Package-Case TO220 - TO-220

Pinning 1: Gate - 2: Drain - 3: Source

Marking

Article in substitution (advised) IRF630 - MTP5N20 - 2SK923 - 2SK924 - 2SK1391 - 2SK1921