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Scheda Tecnica |
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Article IRF620 |
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Description N-Channel HEXFET POWER MOSFET integrated zener diode |
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Polarity N-CHANNEL (N-FET) |
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Drain Current 5,2A |
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Drain-Source Voltage 200V |
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Resistence Drain-Soucer RDS 0,8oHM - 0R8 - 0,8R |
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Power dissipation 50W |
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Time |
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Package-Case TO220 - TO-220 |
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Pinning 1: Gate - 2: Drain - 3: Source |
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Marking |
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Article in substitution (advised) BUZ60 - MTP5N20 - 2SK358 - 2SK924 - 2SK1391 |
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