2SK1119 Transistor N-Channel Mosfet
Scheda tecnica
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Scheda Tecnica |
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Article 2SK1119 |
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Description N-CHANNEL MOSFET integrated diode-MOS FIELD EFFECT TRANSISTOR |
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Polarity N-CHANNEL |
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Drain-Source Voltage 1000V |
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Drain Current 4A |
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Power dissipation 100W |
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Resistence Drain-Soucer RDS 3ohm - 3R |
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Package-Case TO220AB - TO-220AB |
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Pinning 1: Gate - 2: Source - 3: Drain |
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Article in substitution (advised) STP4N100 |
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Complementary type |
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Marking |
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Manufacturer |
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Application DC-DC converter - Power Motor control |
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