IRF730 N-MOS 400V 5.5A 100W 1.0R
Scheda tecnica
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Scheda Tecnica |
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Article IRF730 |
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Description N-Channel HEXFET POWER MOSFET integrated zener diode |
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Polarity N-CHANNEL (N-FET) |
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Drain Current 5,5A |
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Drain-Source Voltage 400V |
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Resistence Drain-Soucer RDS 1oHM - - 1R |
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Power dissipation 74W |
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Time |
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Package-Case TO220 - TO-220 |
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Pinning 1: Gate - 2: Drain - 3: Source |
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Marking |
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Article in substitution (advised) BUZ60 - 2SK552 - 2SK553 - 2SK1156 - 2SK1246 |
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Manufacturer |
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Application Fast switching |
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