2SC3117 SI-N EPITAXIAL TRANS. 160V 1,5A
Scheda tecnica
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| Scheda Tecnica |
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| Article 2SC3117 |
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| Description NPN Epitaxial Planar Silicon Transistor |
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| Polarity NPN |
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| Collector-emitter voltage 160V |
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| Collector current 1,5A |
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| Power dissipation |
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| Time |
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| Frequency |
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| Package-Case TO126 - TO-126 |
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| Pinning 1: Emitter - 2: Collector - 3: Base |
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| Complementary 2SA1249 |
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| Marking |
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| Article in substitution (advised) |
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| Manufacturer TOSHIBA |
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| Application SWITCHING APPLICATION - HIGH BREAKDOWN VOLTAGE - LARGE CURRENT CAPACITY - |
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| ADOPTION OF MBIT PROCESS |
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| Nota informativa I dati presenti in questa scheda sono solo indicativi. |
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| Per informazioni piu precise consultare i dati del produttore. |
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