GTG20N60A4D - HGTG 20N 60A4D N-CHANNEL MOSFET IGBT
Scheda tecnica
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| Scheda Tecnica |
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| Article HGTG20N60A4D |
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| Description IGBT Isulated gate bipolar SMPS transistor integrated hyperfast (iperfast) recovery diode |
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| Polarity N-CHANNEL (N-FET) |
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| Drain-Source Voltage 600v |
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| Drain Current 70A |
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| Power dissipation 290W |
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| Resistence Drain-Soucer RDS |
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| Package-Case TO247 - TO-247 |
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| Pinning 1: Gate - 2: Collector - 3: Emitter |
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| Article in substitution (advised) G20N60A4D - G20N60A4D |
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| Time 140ns |
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| Marking |
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| Manufacturer |
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| Application |
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| Nota informativa I dati presenti in questa scheda sono solo indicativi. |
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| Per informazioni piu precise consultare i dati del produttore. |
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